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APM7318
Dual N-Channel Enhancement Mode MOSFET
Features
* * * *
20V/8A , RDS(ON)=15m(typ.) @ VGS=4.5V RDS(ON)=30m(typ.) @ VGS=2.5V Super High Dense Cell Design for Extremely Low RDS(ON) Reliable and Rugged SO-8 Package
Pin Description
SO-8
S1 G1 S2 G2 1 2 3 4 8 7 6 5 D1 D1 D2 D2
Top View
Applications
*
Power Management in Notebook Computer , Portable Equipment and Battery Powered Systems.
G1
D1
D1
D2
D2
G2
S1
S2
N-Channel MOSFET N-Channel MOSFET
Ordering and Marking Information
APM 7318
H andling C ode Tem p. Range Package C ode Package C ode K : S O -8 O peration Junction Tem p. R ange C : -55 to 150 C H andling C ode TR : Tape & Reel
AP M 7318 K :
AP M 7318 XX XX X
XX XX X - D ate Code
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ANPEC Electronics Corp. Rev. A.3 - May., 2003 1 www.anpec.com.tw
APM7318
Absolute Maximum Ratings
Symbol VDSS VGSS ID * IDM PD Drain-Source Voltage Gate-Source Voltage Maximum Drain Current - Continuous Maximum Drain Current - Pulsed Maximum Power Dissipation TA=25C TA=100C TJ TSTG RjA Maximum Junction Temperature Storage Temperature Range Thermal Resistance - Junction to Ambient Parameter
(TA = 25C unless otherwise noted)
Rating 20 16 8 24 2.5 1.0 150 -55 to 150 50 Unit V A W W C C C/W
* Surface Mounted on FR4 Board, t 10 sec.
Electrical Characteristics
Symbol Static BVDSS IDSS VGS(th) IGSS RDS(ON)a VSDa
b
(TA = 25C unless otherwise noted)
Test Condition APM7318 Min. Typ. Max. 20 1 0.7 0.9 15 30 0.7 14 5 2.8 9 1.5 100 20 40 1.3 17 nC 15 20 43 24 ns Unit
Parameter
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance Diode Forward Voltage
VGS=0V , IDS=250A VDS=18V , VGS=0V VDS=VGS , IDS=250A VGS=16V , VDS=0V VGS=4.5V , IDS=8A VGS=2.5V , IDS=2A ISD=4A , VGS=0V VDS=10V , IDS= 6A VGS=4.5V
V A V nA m V
Dynamic Qg Total Gate Charge Qgs Gate-Source Charge Qgd td(ON) Tr td(OFF) Tf Gate-Drain Charge Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time
VDD=10V , IDS=2A , VGEN=4.5V , RG=0.2
14 30 16 1220 335 215
VGS=0V Ciss Input Capacitance Coss Output Capacitance VDS=15V Crss Reverse Transfer Capacitance Frequency=1.0MHz Notes a : Pulse test ; pulse width 300s, duty cycle 2% b : Guaranteed by design, not subject to production testing
Copyright ANPEC Electronics Corp. Rev. A.3 - May., 2003 2
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APM7318
Typical Characteristics
Output Characteristics
30
VGS=3,4,5,6,7,8,9,10V
Transfer Characteristics
30 25
25
IDS-Drain Current (A)
IDS-Drain Current (A)
20 15 10 5 0
V GS=2.5V
20 15 10 5 0 0.0
TJ=25C TJ=125C TJ=-55C
VGS=2V
0
1
2
3
4
5
6
7
8
9
10
0.5
1.0
1.5
2.0
2.5
3.0
VDS-Drain-to-Source Voltage (V)
VGS-Gate-to-Source Voltage (V)
Threshold Voltage vs. Junction Temperature
1.50
IDS=250A
On-Resistance vs. Drain Current
0.05
VGS(th)-Threshold Voltage (V) (Normalized)
1.25 1.00 0.75 0.50 0.25 0.00 -50
RDS(ON)-On-Resistance ()
0.04
VGS=2.5V
0.03
0.02
VGS=4.5V
0.01
-25
0
25
50
75
100 125 150
0.00
0
2
4
6
8
10
Tj-Junction Temperature (C)
IDS-Drain Current (A)
Copyright ANPEC Electronics Corp. Rev. A.3 - May., 2003
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APM7318
Typical Characteristics (Cont.)
On-Resistance vs. Gate-to-Source Voltage
0.08
IDS=8A
On-Resistaence vs. Junction Temperature
2.00
VGS=4.5V IDS=8A
RDS (ON) - On-Resistance ()
0.06 0.05 0.04 0.03 0.02 0.01 0.00 1 2 3 4 5 6 7 8 9 10
RDS(ON)-On Resistance () (Normalized)
0.07
1.75 1.50 1.25 1.00 0.75 0.50 0.25 0.00 -50 -25 0 25 50 75
100 125 150
Gate Voltage (V)
Tj-Junction Temperature (C)
Gate Charge
10
Capacitance Characteristics
1800
Frequency=1MHz
VGS-Gate-to-Source Voltage (V)
VDS=10V IDS=6A
C-Capacitance (pF)
8
1500
Ciss
1200 900 600
Coss
6
4
2
300 0
Crss
0
0
5
10
15
20
25
30
0
5
10
15
20
QG-Total Gate Charge (nC)
VDS-Drain-to-Source Voltage (V)
Copyright ANPEC Electronics Corp. Rev. A.3 - May., 2003
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APM7318
Typical Characteristics (Cont.)
Source-Drain Diode Forward Voltage
30 10
Single Pulse Power
80 70 60
ISD-Source Current (A)
TJ=150C
TJ=25C
Power (W)
1.2 1.4
50 40 30 20 10
1
0.1 0.0
0.2
0.4
0.6
0.8
1.0
0 0.01
0.1
1
10
30
VSD-Source to Drain Voltage
Time (sec)
Normalized Thermal Transient Impedence, Junction to Ambient
Normalized Effective Transient Thermal Impedance
1
Duty Cycle = 0.5
D= 0.2 D= 0.1
0.1
D= 0.05 D= 0.02 1.Duty Cycle, D=t1/t2 2.Per Unit Base=RthJA=50C/W 3.TJM-TA=PDMZthJA 4.Surface Mounted
SINGLE PULSE
0.01 1E-4
1E-3
0.01
0.1
1
10
30
Square Wave Pulse Duration (sec)
Copyright ANPEC Electronics Corp. Rev. A.3 - May., 2003
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APM7318
Packaging Information
SOP-8 pin ( Reference JEDEC Registration MS-012)
E
H
e1 D
e2
A1
A
1 L
0.004max.
Dim A A1 D E H L e1 e2 1
Mi ll im et er s Min . 1. 35 0. 10 4. 80 3. 80 5. 80 0. 40 0. 33 1. 27B S C 8 Max . 1. 75 0. 25 5. 00 4. 00 6. 20 1. 27 0. 51 Min. 0. 053 0. 004 0. 189 0. 150 0. 228 0. 016 0. 013
0.015X45
Inche s Max . 0. 069 0. 010 0. 197 0. 157 0. 244 0. 050 0. 020 0. 50B S C 8
Copyright ANPEC Electronics Corp. Rev. A.3 - May., 2003
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APM7318
Physical Specifications
Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb) Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.
Reflow Condition
(IR/Convection or VPR Reflow)
Reference JEDEC Standard J-STD-020A APRIL 1999
temperature
Peak temperature
183C Pre-heat temperature
Time
Classification Reflow Profiles
Convection or IR/ Convection Average ramp-up rate(183C to Peak) 3C/second max. 120 seconds max Preheat temperature 125 25C) 60 - 150 seconds Temperature maintained above 183C Time within 5C of actual peak temperature 10 -20 seconds Peak temperature range 220 +5/-0C or 235 +5/-0C Ramp-down rate 6 C /second max. 6 minutes max. Time 25C to peak temperature VPR 10 C /second max.
60 seconds 215-219C or 235 +5/-0C 10 C /second max.
Package Reflow Conditions
pkg. thickness 2.5mm and all bgas Convection 220 +5/-0 C VPR 215-219 C IR/Convection 220 +5/-0 C pkg. thickness < 2.5mm and pkg. volume 350 mm pkg. thickness < 2.5mm and pkg. volume < 350mm Convection 235 +5/-0 C VPR 235 +5/-0 C IR/Convection 235 +5/-0 C
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APM7318
Reliability test program
Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245C,5 SEC 1000 Hrs Bias @ 125C 168 Hrs, 100% RH, 121C -65C ~ 150C, 200 Cycles
Carrier Tape & Reel Dimensions
t E Po P P1 D
W
F
Bo
Ao
D1 T2
Ko
J C A B
T1
A 3301 F 5.5 0.1 B 62 1.5 C 12.75 + 0.1 5 J 2 + 0.5 T1 12.4 +0.2 P1 2.0 0.1 T2 2 0.2 Ao 6.4 0.1 W 12 + 0.3 - 0.1 Bo 5.2 0.1 P 8 0.1 E 1.75 0.1
Application
SOP-8 Application SOP-8
D D1 Po 1.550.1 1.55+ 0.25 4.0 0.1
Ko t 2.1 0.1 0.30.013
(mm)
Copyright ANPEC Electronics Corp. Rev. A.3 - May., 2003
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APM7318
Cover Tape Dimensions
Application SOP- 8 Carrier Width 12 Cover Tape Width 9.3 Devices Per Reel 2500
Customer Service
Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369
Copyright ANPEC Electronics Corp. Rev. A.3 - May., 2003
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